메뉴 건너뛰기




Volumn 13, Issue 10, 1992, Pages 501-503

Silicon-Carbide High-Voltage (400 V) Schottky Barrier Diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; PLATINUM; SILICON CARBIDE; SOLID STATE RECTIFIERS;

EID: 0026940017     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192814     Document Type: Article
Times cited : (163)

References (7)
  • 3
    • 36449005151 scopus 로고
    • High-voltage 6H-SiC P-N junction diodes
    • L. G. Matus, J. A. Powell, and C. S. Salupo, “High-voltage 6H-SiC P-N junction diodes,” Appl. Phys. Lett., vol. 59, pp. 1770–1772, 1991.
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 1770-1772
    • Matus, L.G.1    Powell, J.A.2    Salupo, C.S.3
  • 5
    • 36549103490 scopus 로고
    • Pt and PtSix Schottky contacts on n-type β-SiC
    • N. A. Papanicolaou, A Christou, and M. L. Gipe, “Pt and PtSi x Schottky contacts on n-type β-SiC,” J. Appl. Phys., vol. 65, pp. 3526–3530, 1989.
    • (1989) J. Appl. Phys. , vol.65 , pp. 3526-3530
    • Papanicolaou, N.A.1    Christou, A.2    Gipe, M.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.