4H-SiC MESFET with 2.8 W/mm Power Density at 1.8 GHz

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 406-408

  Weitzel, Charles E ^a   Nordquist, Kevin J ^a   Palmour, John W ^b   Carter, Calvin H ^b  

^a MOTOROLA INC   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; EPITAXIAL GROWTH; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

MAXIMUM TRANSCONDUCTANCE; POWER DENSITY;

MESFET DEVICES;

EID: 0028532136     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320983     Document Type: Article

References (5)

1. M. W. Shin, G. L. Bilbro, and R. J. Trew, “High temperature operation of N-type 6H-SiC and P-type diamond MESFET's.” in IEEE/Cornell Conf., 1993, pp. 421–430.
2. M. C: Driver, R. H. Hopkins, C. D. Brandt, D. L. Barrett, A. A. Burk, R. C. Clarke, G. W. Eldridge, H. M. Hobgood, J. P. McMullin, R. Sriram,” Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics,” in GaAs IC Symp. Tech. Dig., 1993, pp. 19–21.
3. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., “Silicon carbide power devices for aerospace applications,” in Proc. 28th lntersociety Energy Conversion Conf., Amer Chem. Soc., 1993, pp. 1.249-1.254.
4. W. J. Schaffer, H. S. Kong, G. H. Negley, and J. W. Palmour, “Hall effect and C-V measurements on epitaxial 6H and 4H SiC,” in Silicon Carbide and Related Materials, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, Eds., Inst. Phys. Pub., Bristol, No. 137.
5. H. M. Macksey and F. H. Doerbeck, “GaAs FET's having high output power per unit gate width,” in IEEE Electron Device Lett., vol. 2, no. 6, 1981, pp. 147–148.