Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas

Journal of the Electrochemical Society

Volumn 142, Issue 1, 1995, Pages 312-319

  Yih, P H ^a   Steckl, A J ^a  

^a UNIVERSITY OF CINCINNATI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPOSITION EFFECTS; FLUORINE COMPOUNDS; HYDROGEN; MIXTURES; MORPHOLOGY; OXIDES; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; SURFACES;

DOPING CONCENTRATION; FLUORINATED PLASMAS; GAS PLASMAS; GRAPHITE SHEET; RESIDUE PREVENTION;

SILICON CARBIDE;

EID: 0029197075     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2043918     Document Type: Article

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