High efficiency operation of 6-H SiC MESFETs at 6 GHz

Annual Device Research Conference Digest

Volumn , Issue , 1995, Pages 104-105

  Sriram, S ^a   Barron, R ^a   Morse, A W ^a   Smith, T J ^a   Augustine, G ^a   Burk Jr , A A ^a   Clarke, R C ^a   Glass, R C ^a   Hobgood, H M ^a   Orphanos, P A ^a   Siergiej, R R ^a   Brandt, C D ^a   Driver, M C ^a   Hopkins, R H ^a  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ELECTRIC CONDUCTIVITY; NICKEL; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

CHANNEL RECESSING; MESA ISOLATION; POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 0029546261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)