Scaling studies of hot electron injection and interface-state generation in deep-submicron silicon MOSFETs: A Monte Carlo analysis

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 1994, Pages 81-82

  Ellis Monaghan, J J ^a,b   Hulfachor, R B ^a   Kim, K W ^a   Littlejohn, M A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85063564000     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.1994.1009424     Document Type: Conference Paper

References (3)

1. J. J. Ellis-Monaghan, K. W. Kim, and M. A. Littlejohn, J. Appl. Phys., to be published.
2. R. H. Dennard, F. H. Gaensslen, H.-N. Yu, V.L. Rideout, E. Bassous, and A. R. LeBlanc, IEEE J. Solid Stale Circuits SC-9, 256 (1974).
3. G. Baccarani, M. R. Wordeman, and R. H. Dennard, IEEE Trans. Electron Devices ED-31, 452 (1984).