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Volumn 31, Issue 4, 1984, Pages 452-462

Generalized Scaling Theory and Its Application to a 1/4 micrometer MOSFET Design

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021406605     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21550     Document Type: Article
Times cited : (371)

References (41)
  • 1
    • 0000901940 scopus 로고
    • Fundamental limitations in micro electronics-1. MOS technology
    • B. Hoeneisen and C. A. Mead “Fundamental limitations in micro electronics-1. MOS technology,” Solid-State Electron., vol. 15, pp. 819–829, 1972.
    • (1972) Solid-State Electron. , vol.15 , pp. 819-829
    • Hoeneisen, B.1    Mead, C.A.2
  • 3
    • 84944979497 scopus 로고
    • Fundamental performance limits of MOS integrated circuits
    • Feb
    • R. M. Swanson and J. D. Meindl, “Fundamental performance limits of MOS integrated circuits,” in ISSCC Tech. Dig,, pp. 110–111, Feb. 1975.
    • (1975) ISSCC Tech. Dig , pp. 110-111
    • Swanson, R.M.1    Meindl, J.D.2
  • 4
    • 0016506999 scopus 로고
    • Physical limits in digital electronics
    • May
    • R. W. Keyes, “ Physical limits in digital electronics,” Proc. IEEE, vol. 63, pp. 740–767, May 1975.
    • (1975) Proc. IEEE , vol.63 , pp. 740-767
    • Keyes, R.W.1
  • 5
    • 0018457254 scopus 로고
    • Model and performance of hot-electron MOS transistors for VLSI
    • Apr
    • B. Hoefflinger, H. Sibbert, and G. Zimmer, “Model and performance of hot-electron MOS transistors for VLSI,” IEEE Trans. Electron Devices, vol. ED-26, pp. 513–520, Apr. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 513-520
    • Hoefflinger, B.1    Sibbert, H.2    Zimmer, G.3
  • 10
    • 84910922832 scopus 로고
    • 1-μm MOSFET VLSI technology: Part II-Device designs and characteristics for high-performance logic applications
    • Apr
    • R. H. Dennard, F. H, Gaensslen, E. J. Walker, and P. W. Cook, “1-μm MOSFET VLSI technology: Part II-Device designs and characteristics for high-performance logic applications,” IEEE J. Solid-St. Circuits, vol. SC-14, pp. 247–255, Apr. 1979.
    • (1979) IEEE J. Solid-St. Circuits , vol.SC-14 , pp. 247-255
    • Dennard, R.H.1    Gaensslen, F.H.2    Walker, E.J.3    Cook, P.W.4
  • 11
    • 49949134400 scopus 로고
    • Effects of diffusion current on characteristics of metal-oxide (insulator) semiconductor transistors
    • H. C. Pao and C. T. Sah, “Effects of diffusion current on characteristics of metal-oxide (insulator) semiconductor transistors,” Solid-State Electron., vol. 9, pp. 927–937, 1966.
    • (1966) Solid-State Electron. , vol.9 , pp. 927-937
    • Pao, H.C.1    Sah, C.T.2
  • 12
    • 0016621575 scopus 로고
    • Static characteristics of extremely thin gate oxide MOS transistors
    • Y. Hayashi, “Static characteristics of extremely thin gate oxide MOS transistors,” Electron. Lett., vol. 11, pp. 618–620, 1975.
    • (1975) Electron. Lett. , vol.11 , pp. 618-620
    • Hayashi, Y.1
  • 13
    • 36049059178 scopus 로고
    • Transport properties of electrons in inverted silicon surfaces
    • May
    • F. F. Fang and A. B. Fowler, “Transport properties of electrons in inverted silicon surfaces,” Phys. Rev., vol. 169, pp. 619–631, May 1968.
    • (1968) Phys. Rev. , vol.169 , pp. 619-631
    • Fang, F.F.1    Fowler, A.B.2
  • 14
    • 0018683243 scopus 로고
    • Characterization of the electron mobility in the inverted (100) Si surface
    • Dec
    • A. G. Sabnis and J, T. Clemens, “Characterization of the electron mobility in the inverted (100) Si surface,” in IEDM Tech. Dig., pp. 18–21, Dec. 1979.
    • (1979) IEDM Tech. Dig. , pp. 18-21
    • Sabnis, A.G.J.1    Clemens, T.2
  • 15
    • 0019048875 scopus 로고
    • Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
    • Aug
    • S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces, ” IEEE Trans. Electron Devices, vol. ED-27, pp. 1497–1508, Aug. 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1497-1508
    • Sun, S.C.1    Plummer, J.D.2
  • 16
    • 0014749359 scopus 로고
    • Hot electron effects and saturation velocities in silicon inversion layers
    • Mar
    • F. F. Fang and A. B. Fowler, “Hot electron effects and saturation velocities in silicon inversion layers,” J. Appl. Phys., vol. 41, pp. 1825–1831, Mar. 1970.
    • (1970) J. Appl. Phys. , vol.41 , pp. 1825-1831
    • Fang, F.F.1    Fowler, A.B.2
  • 17
    • 0018960654 scopus 로고
    • Velocity Of surface carriers in inversion layers in silicon
    • R. W. Coen and R. S. Muller, “Velocity Of surface carriers in inversion layers in silicon,” Solid-State Electron., vol. 23, pp. 35–40, 1980.
    • (1980) Solid-State Electron. , vol.23 , pp. 35-40
    • Coen, R.W.1    Muller, R.S.2
  • 18
    • 0019584636 scopus 로고
    • Measurement of the high-field drift velocity of electrons in inversion layers in silicon
    • July
    • J. A. Cooper and D. F. Nelson, “Measurement of the high-field drift velocity of electrons in inversion layers in silicon,” IEEE Electron Device Lett., vol. EDL-2, July 1981.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2
    • Cooper, J.A.1    Nelson, D.F.2
  • 19
    • 0019075967 scopus 로고
    • The impact of scaling laws on the choice of n-channel or p-chan-nel for MOS VLSI
    • Oct
    • P. K. Chatterjee, W. R. Hunter, T. C. Holloway, and Y. T. Lin, “The impact of scaling laws on the choice of n-channel or p-chan-nel for MOS VLSI,” IEEE Electron Device Lett., vol. EDL-1, pp. 220–223, Oct. 1980.
    • (1980) IEEE Electron Device Lett. , vol.EDL-1 , pp. 220-223
    • Chatterjee, P.K.1    Hunter, W.R.2    Holloway, T.C.3    Lin, Y.T.4
  • 20
    • 0019687659 scopus 로고
    • Limits to scaling MOS Devices
    • also “MOS device and technology constraints in VLSI,” IEEE Trans. Electron Devices, vol. ED-29, pp.567-573, Apr. 1982.
    • Y. A. El-Mansy, “Limits to scaling MOS Devices,” in 1981 Symp. on VLSI Tech. Dig. Tech. Papers, pp. 16–17, Sept. 1981; also “MOS device and technology constraints in VLSI,” IEEE Trans. Electron Devices, vol. ED-29, pp.567-573, Apr. 1982.
    • (1981) 1981 Symp. on VLSI Tech. Dig. Tech. Papers , pp. 16-17
    • El-Mansy, Y.A.1
  • 21
    • 0018457254 scopus 로고
    • Model and Performance of hot-electron MOS transistors for VLSI
    • B. Hoefflinger, H. Sibbert, and G. Zimmer, “Model and Performance of hot-electron MOS transistors for VLSI,” IEEE Trans. Electron Devices, vol. ED-26, pp. 513-520., Apr. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 513-520
    • Hoefflinger, B.1    Sibbert, H.2    Zimmer, G.3
  • 22
    • 0016436798 scopus 로고
    • Improved dielectric reliability of Si02 films with poly crystalline silicon electrodes
    • Jan
    • C. M. Osburn and E. Bassous “Improved dielectric reliability of Si02 films with poly crystalline silicon electrodes,” J. Electrochem. Soc., vol. 122, pp. 89–92, Jan. 1972.
    • (1972) J. Electrochem. Soc. , vol.122 , pp. 89-92
    • Osburn, C.M.1    Bassous, E.2
  • 25
    • 0019596416 scopus 로고
    • Finite element analysis of semiconductor devices: The FIELDAY program
    • July
    • E. M. Buturla, P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite element analysis of semiconductor devices: The FIELDAY program,” IBM J. Res. Develop., vol. 25, pp. 218–231, July 1981.
    • (1981) IBM J. Res. Develop. , vol.25 , pp. 218-231
    • Buturla, E.M.1    Cottrell, P.E.2    Grossman, B.M.3    Salsburg, K.A.4
  • 28
  • 29
    • 0019608286 scopus 로고
    • Technology challenges for ultrasmall silicon MOSFET’s
    • Sept/Oct.
    • R. H. Dennard, “Technology challenges for ultrasmall silicon MOSFET’s,” J. Vac. Sci. Technol. vol. 19, pp. 537–539, Sept./ Oct. 1981.
    • (1981) J. Vac. Sci. Technol. , vol.19 , pp. 537-539
    • Dennard, R.H.1
  • 30
    • 0020831950 scopus 로고
    • Transconductance degradation in thin-oxide MOSFET’s
    • Oct
    • G. Baccarani and M. A. Wordeman, “Transconductance degradation in thin-oxide MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1295–1304, Oct 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1295-1304
    • Baccarani, G.1    Wordeman, M.A.2
  • 31
    • 34547827353 scopus 로고
    • Properties of semiconductor surface inversion layers in the electric quantum limit
    • Nov
    • F. Stern and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, pp. 816–835, Nov. 1967.
    • (1967) Phys. Rev. , vol.163 , pp. 816-835
    • Stern, F.1    Howard, W.E.2
  • 32
    • 84944993886 scopus 로고
    • Charge accumulation and mobility in thin dielectric MIS transistors
    • C. G. Sodini, T. W. Ekstedtd, and J. L. Moll, “Charge accumulation and mobility in thin dielectric MIS transistors,” in Device Res. Conf. Proc., June 1980.
    • (1980) Device Res. Conf. Proc.
    • Sodini, C.G.1    Ekstedtd, T.W.2    Moll, J.L.3
  • 33
    • 0019662594 scopus 로고
    • A transmission-line model for silicided diffusions: Impact on the performance of VLSI circuits
    • also IEEE Trans. Electron Devices, vol. ED-29, pp. 651-660,1982.
    • D. B. Scott, W. R. Hunter, and H. Shichijo, “A transmission-line model for silicided diffusions: Impact on the performance of VLSI circuits,” in 1981 Symp. on VLSI Tech. Dig. Tech. Papers, pp. 94–95, Sept. 1981; also IEEE Trans. Electron Devices, vol. ED-29, pp. 651-660,1982.
    • (1981) 1981 Symp. on VLSI Tech. Dig. Tech. Papers , pp. 94-95
    • Scott, D.B.1    Hunter, W.R.2    Shichijo, H.3
  • 35
    • 84944993888 scopus 로고    scopus 로고
    • Electrical properties of Al/Ti contact metallurgy for VLSI applications
    • C. Y. Ting and B. L. Crowder, “Electrical properties of Al/Ti contact metallurgy for VLSI applications,” J. Electrochem. Soc., to be published.
    • J. Electrochem. Soc.
    • Ting, C.Y.1    Crowder, B.L.2
  • 36
  • 37
    • 0019717264 scopus 로고
    • A re-examination of practical scalability limits of n-channel and p-channel MOS devices for VLSI
    • Dec
    • H. Shichijo, “A re-examination of practical scalability limits of n-channel and p-channel MOS devices for VLSI,” in IEDM Tech. Dig., pp. 219–222, Dec. 1981.
    • (1981) IEDM Tech. Dig. , pp. 219-222
    • Shichijo, H.1
  • 38
    • 0020087768 scopus 로고
    • Short-channel MOSFET VT-VDS characteristics model based on a point charge and its mirror images
    • Feb
    • Y. Ohno, “Short-channel MOSFET VT-VDS characteristics model based on a point charge and its mirror images,” IEEE Trans. Electron Devices, vol. ED-29, pp. 211–215, Feb. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 211-215
    • Ohno, Y.1
  • 39
    • 0019299133 scopus 로고
    • Scaling the micron barrier with X-rays
    • “X-ray lithography breaks the submicron barrier,” IEEE Spectrum, pp. 26–29, May 1981.
    • M. P. Lepselter, “Scaling the micron barrier with X-rays,” in IEDM Tech. Dig., pp. 42–43, Dec. 1980; also “X-ray lithography breaks the submicron barrier,” IEEE Spectrum, pp. 26–29, May 1981.
    • (1980) IEDM Tech. Dig. , pp. 42-43
    • Lepselter, M.P.1
  • 40
    • 0019268411 scopus 로고
    • Experimental and theoretical characterization of submicron MOSFET’s
    • Dec
    • W. Fichtner, E. N. Fuls, R. L. Johnston, T. T. Sheng, and R. K. Watts “Experimental and theoretical characterization of submicron MOSFET’s,” in IEDM Tech. Dig., pp. 24–27, Dec. 1980.
    • (1980) IEDM Tech. Dig. , pp. 24-27
    • Fichtner, W.1    Fuls, E.N.2    Johnston, R.L.3    Sheng, T.T.4    Watts, R.K.5
  • 41
    • 0017428738 scopus 로고
    • Current transport in narrow-base transistors
    • Jan
    • G. Baccarani, C. Jacoboni, and A. M. Mazzone, “Current transport in narrow-base transistors,” Solid-State Electron., vol. 20, pp. 5–15, Jan. 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 5-15
    • Baccarani, G.1    Jacoboni, C.2    Mazzone, A.M.3


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