The physics of hot-electron degradation of Si MOSFET's: Can we understand it?

Applied Surface Science

Volumn 39, Issue 1-4, 1989, Pages 578-596

  Fischetti, M V ^a   Laux, S E ^a   Dimaria, D J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; SILICA--ELECTRONIC PROPERTIES;

ELECTRON INJECTION; HOT-ELECTRON DEGRADATION; SOFTWARE PACKAGE DAMOCLES;

SEMICONDUCTING SILICON;

EID: 0024755019     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(89)90473-X     Document Type: Article

References (47)

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9. MOS/sup 2/: an efficient MOnte Carlo Simulator for MOS devices
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16. Surface Plasmons in Thin Films
17. Correlation of trap creation with electron heating in silicon dioxide