Generalized Guide for MOSFET Miniaturization

IEEE Electron Device Letters

Volumn 1, Issue 1, 1980, Pages 2-4

  Brews, J R ^a   Fichtner, W ^a   Nicollian, E H ^a   Sze, S M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039956433     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25205     Document Type: Article

References (5)

1. M.B. Barron, “Low-level currents in IGFETs”, Solid-State Electron. 15 293 (1972).
2. J.R. Brews, “A charge-sheet model of the MOSFET,” Solid-State Electron. 21 345 (1978).
3. H.C. Pao and C.T. Sah, “Effects of diffusion current on characteristics of MOS transistors”, Solid-State Electron. 9, 927 (1966).
4. W. Fichtner, “Two-dimensional modelling of SOS transistors”, IEE J. Solid-State and Electron Dev. 2, 47 (1978).
5. R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous and A. Le Blanc, “Design of ion-implanted Mosfet's with very small physical dimensions”, IEEE J. Solid-State Circuits, SC-9, 256 (1974).