Hot Carrier Hardness Analysis of Submicrometer LDD Devices

IEEE Transactions on Electron Devices

Volumn 38, Issue 3, 1991, Pages 512-517

  Hansch, Wilfried ^a   Mazure, Carlos ^b   Lill, A ^a   Orlowski, Marius K ^b  

^a SIEMENS AG   (Germany)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; OXIDES; SEMICONDUCTOR MATERIALS--HOT CARRIERS;

DC STRESS CONDITIONS; HOT CARRIER HARDNESS ANALYSIS; INTERFACE STATES; LIGHTLY DOPED DRAIN (LDD) DEVICES; OXIDE DAMAGE; STRESS INDUCED DAMAGE;

SEMICONDUCTOR DEVICES;

EID: 0026122995     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75160     Document Type: Article

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