Drain-Engineered Hot-Electron-Resistant Device Structures: A Review

IEEE Transactions on Electron Devices

Volumn 36, Issue 6, 1989, Pages 1125-1132

  Sanchez, Julian J ^a   Hsueh, Kelvin K ^b   Demassa, Thomas A ^c  

^a INTEL CORPORATION   (United States)

^b Gould Inc   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

DRAIN REGION DESIGN; HOT ELECTRON RESISTANT DEVICES; LIGHTLY DOPED DRAIN DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024684021     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.24357     Document Type: Article

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