EFFECTS OF WEAK GATE-TO-DRAIN (SOURCE) OVERLAP ON MOSFET CHARACTERISTICS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 292-295

  Ko, P K ^a   Chan, T Y ^a   Wu, A T ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SUBSTRATES - ELECTRIC FIELD EFFECTS;

DRAIN DRIVE DEGRADATION; HIGH-FIELD EFFECTS; WEAK GATE-TO-DRAIN (SOURCE) OVERLAP PHENOMENA;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022955270     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1986.191173     Document Type: Conference Paper

References (6)