Interface state generation mechanism in n-MOSFET's

Solid State Electronics

Volumn 32, Issue 12, 1989, Pages 1579-1583

  Yasuda, N ^a   Nakamura, H ^a   Taniguchi, K ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

charge pumping technique; device degradation; hot carrier; hot electron; Interface state; MOSFET

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CARRIER INJECTION; HOT CARRIER; HOT ELECTRON; INTERFACE STATE GENERATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024878589     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90277-3     Document Type: Article

References (11)

1. The use of charge pumping currents to measure surface state densities in MOS transistors
2. 2 interface based on hot-hole injection from the anode
3. A reliable approach to charge-pumping measurements in MOS transistors
4. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET's
5. Hot-electron-induced MOSFET degradation — model monitor and improvement
6. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
7. The effects of oxide thickness and temperature on the generation of silicon dioxide/silicon interface states at high electric fields
8. Experimental evidence for hole-induced interface state generation under high field tunneling current stressing
9. 2 under Fowler-Nordheim tunneling stress
10. 2
11. 2 from p-type Si depletion regions