Lateral Distribution of Hot-Carrier-Induced Interface Traps in MOSFET's

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2221-2228

  Ancona, Mario G ^a   Saks, Nelson S ^a   McCarthy, Daniel ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

ABRUPT ARSENIC JUNCTIONS; ELECTRON TRAPPING; HOT CARRIERS; INTERFACE TRAPS; SPATIAL PROFILES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024125256     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8796     Document Type: Article

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