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Science and Technology of Advanced Materials

Volumn 5, Issue 5-6, 2004, Pages 549-554

Development of TiSiN CVD process using TiCl4SiH 4/NH3 chemistry for ULSI anti-oxidation barrier applications

(2) Jun, Keeyoung a Shimogaki, Yukihiro a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Anti oxidation; Barrier metal; CVD; NH3; Partial pressure; SiH4; TiCl4; TiSiN

Indexed keywords

AMMONIA; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; OXIDATION; PARTIAL PRESSURE; REMOVAL; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; ULSI CIRCUITS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTI-OXIDATION; BARRIER METAL; FLOW MODULATION CHEMICAL VAPOR DEPOSITION (FMCVD); SIH4; TICL4;

TITANIUM COMPOUNDS;

EID: 9644274031 PISSN: 14686996 EISSN: None Source Type: Journal
DOI: 10.1016/j.stam.2004.03.002 Document Type: Article

Times cited : (17)

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