Silicon nitride and oxynitride deposition by RT-LPCVD

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 32-36

  Semmache, B ^a   Lemiti, M ^a   Chaneliere Ch ^a   Dubois, Ch ^a   Sibai, A ^a   Canut, B ^b   Laugier, A ^a  

^a UNIVERSITÉ DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

Deposition; Low pressure rapid thermal chemical vapour deposition; Oxynitride; Silicon nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROMAGNETIC WAVE BACKSCATTERING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; THIN FILMS;

LOW PRESSURE RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RT LPCVD); RUTHERFORD BACKSCATTERING SPECTROMETRY; SILICON OXYNITRIDE;

SILICON NITRIDE;

EID: 0031094327     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09333-9     Document Type: Article

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