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Volumn 414, Issue 1, 2002, Pages 13-17

Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia

(6) Temple Boyer, P a Jalabert, L a Couderc, E a Scheid, E a Fadel, P a Rousset, B a

a LAAS CNRS (France)

Author keywords

Chemical vapour deposition; Disilane; Nitrogen doped silicon; Physical properties

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); HYDROGENATION; NITROGEN; POLYSILICON; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STOICHIOMETRY;

BRUGGEMAN THEORY;

THIN FILMS;

EID: 0036647628 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00434-0 Document Type: Article

Times cited : (17)

References (18)

1
- 0030193604
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1161
- Lin, Y.H.¹ Lai, C.S.² Lee, C.L.³ Lei, T.F.⁴ Chao, T.S.⁵

2
- 0031996604
- (1998) J. Electrochem. Soc. , vol.145 , pp. 689
- Aoyama, T.¹ Suzuki, K.² Tashiro, H.³ Tada, Y.⁴ Horiuchi, K.⁵

3
- 0031150209
- (1997) Microelectron. Eng. , vol.36 , pp. 13
- Buchanan, D.A.¹ Lo, S.H.²

4
- 0032121627
- (1998) J. Electrochem. Soc. , vol.145 , pp. 2545
- Navi, M.¹ Dunham, S.T.²

5
- 22244480327
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2094
- Wristers, D.¹ Han, L.K.² Chen, T.³ Wang, H.H.⁴ Kwong, D.L.⁵ Allen, M.⁶ Fulford, J.⁷

6
- 0031069196
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 617
- Yasuoka, A.¹ Kuroi, T.² Shimizu, S.³ Shirahata, M.⁴ Okumura, Y.⁵ Inoue, Y.⁶ Inuishi, M.⁷ Nishimura, T.⁸ Miyushi, H.⁹

7
- 0031364919
- (1997) J. Electrochem. Soc. , vol.144 , pp. 4326
- Nakayama, S.¹ Sakai, T.²

8
- 0032677376
- (1999) Microelectron. Reliabil. , vol.39 , pp. 187
- Temple-Boyer, P.¹ Olivié, F.² Scheid, E.³ Sarrabayrouse, G.⁴ Alay, J.L.⁵ Morante, J.R.⁶

9
- 0000073841
- (1909) Proc. R. Soc. Lond. , vol.9 , pp. 172
- Stoney, G.G.¹

10
- 0000108944
- (1990) Jpn. J. Appl. Phys. , vol.27 , pp. 2105
- Scheid, E.¹ De Mauduit, B.² Taurines, P.³ Bielle-Daspet, D.⁴

11
- 0012830366
- (1991) J. Appl. Phys. , vol.69 , pp. 1703
- Nakazawa, N.¹

12
- 0001450861
- (1993) J. Electrochem. Soc. , vol.140 , pp. 871
- Voutsas, A.T.¹ Hatalis, M.K.²

13
- 0027544703
- (1993) Mater. Sci. Eng. B , vol.17 , pp. 72
- Scheid, E.¹ Pedroviejo, J.J.² Duverneuil, P.³ Gueye, M.⁴ Samitier, J.⁵ El Hassani, A.⁶ Bielle-Daspet, D.⁷

14
- 0029371062
- (1995) Thin Solid Films , vol.266 , pp. 14
- Dehan, E.¹ Temple-Boyer, P.² Henda, R.³ Pedroviejo, J.J.⁴ Scheid, E.⁵

15
- 0034272654
- (2000) J. Vacuum Sci. Technol. A , vol.18 , pp. 2389
- Temple-Boyer, P.¹ Jalabert, L.² Masarotto, L.³ Alay, J.L.⁴ Morante, J.R.⁵

16
- 0031274278
- (1997) Thin Solid Films , vol.310 , pp. 234
- Temple-Boyer, P.¹ Scheid, E.² Faugère, G.³ Rousset, B.⁴

17
- 0000904709
- (1997) Phys. Rev. B , vol.56 , pp. 9193
- Saito, M.¹ Miyamoto, M.²

18
- 0024056374
- (1988) Thin Solid Films , vol.162 , pp. 129
- Noskov, A.G.¹ Gorokhov, E.B.² Solokova, G.A.³ Trukhanov, E.M.⁴ Stenin, S.I.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.