TiN films prepared by flow modulation chemical vapor deposition using TiCl4 and NH3

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1517-1521

  Hamamura, Hirotaka ^a   Komiyama, Hiroshi ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Chemical vapor deposition; Chlorine reduction; Flow modulation; Resistivity; Titanium nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE; ELECTRIC CONDUCTIVITY; REDUCTION; SUBSTRATES; TEMPERATURE CONTROL; THICKNESS MEASUREMENT; TITANIUM NITRIDE; ULSI CIRCUITS;

FILM THICKNESS; FLOW MODULATION CHEMICAL VAPOR DEPOSITION (FMCVD);

METALLIC FILMS;

EID: 0035270945     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1517     Document Type: Article

References (19)