Novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 299-302

  Beitel, G ^a   Wendt, H ^a   Fritsch, E ^a   Weinrich, V ^a   Engelhardt, M ^a   Hasler, B ^a   Rohr T ^a   Bergmann, R ^a   Scheler, U ^a   Malek, K H ^a   Nagel, N ^a   Gschwandtner, A ^a   Pamler, W ^a   Honlein W ^a   Dehm, C ^a   Mazure C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THERMOOXIDATION; TITANIUM NITRIDE;

BARIUM STRONTIUM TITANATE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0033190132     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00393-7     Document Type: Article

References (2)

1. S. Bilodeau et al.. Solid State Technology 7, 1997, p.235.
2. R.B.Khamankar et al., IEDM, Washington, DC (1997).