Thermal metallorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications

Materials Research Society Symposium - Proceedings

Volumn 427, Issue , 1996, Pages 343-348

  Custer, J S ^a   Smith, Paul Martin ^a   Jones, Ronald V ^a   Maverick, A W ^a   Roberts, D A ^a   Norman, J A T ^a   Hochberg, A K ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; SEMICONDUCTING SILICON; SILICON NITRIDE; TITANIUM NITRIDE; ULSI CIRCUITS;

ADVANCED DIFFUSION BARRIERS; TITANIUM SILICON NITRIDE FILMS;

CONDUCTIVE FILMS;

EID: 0030384272     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)