Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2011-2015

  Eisenbraun, Eric ^a   Upham, Allan ^a   Dash, Raj ^a   Zeng, Wanxue ^a   Hoefnagels, Johann ^a   Lane, Sarah ^a   Anjum, Dalaver ^a   Dovidenko, Katharine ^a   Kaloyeros, Alain ^a   Arkles, Barry ^b   Sullivan, John J ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Gelest Inc   (United States)

^c MKS Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044521990     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. The International Technology Roadmap for Semiconductors, 1999 ed. (Semiconductor Industry Association, San Jose, CA, 1999), p. 165.
2. X. Sun, J. Reid, E. Kolawa, and M. Nicolet, J. Appl. Phys. 81, 656 (1997).
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6. J. Custer, P. Smith, R. Jones, A. Maverick, D. Roberts, J. Norman, and A. Hochberg, Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 (Materials Research Society, Pittsburgh, PA, 1996), p. 343.
7. P. Smith et al., in Ref. 6, p. 249.
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9. See, for example, J. Kelsey, C. Goldberg, G. Nuesca, G. Peterson, A. Kaloyeros, and B. Arkles, J. Vac. Sci. Technol. B 17, 1101 (1999).
10. X. Sun, E. Kolawa, S. Im, C. Garland, and M. Nicolet, Appl. Phys. A: Mater. Sci. Process. 65, 43 (1997).
11. X. Sun, J. Reid, E. Kolawa, M. Nicolet, and R. Ruiz, J. Appl. Phys. 81, 664 (1997).