Tantalum pentoxide for advanced DRAM applications

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 440-446

  McKinley, K A ^a   Sandler, N P ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

High dielectric constant films; Low pressure chemical vapor deposition (LPCVD); Tantalum pentoxide (Ta2O5)

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; PERMITTIVITY; STOICHIOMETRY; TANTALUM COMPOUNDS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICES; TANTALUM PENTOXIDE;

DIELECTRIC FILMS;

EID: 0030397789     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08975-4     Document Type: Article

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