Reactively sputtered Ti-Si-N films I. Physical properties

Journal of Applied Physics

Volumn 81, Issue 2, 1997, Pages 656-663

  Sun, X ^a   Reid, J S ^a,b   Kolawa, E ^a   Nicolet, M A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342357272     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364133     Document Type: Article

References (22)

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