Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 251-256

  Mastro, M A ^a   Eddy Jr , C R ^a   Bassim, N D ^a   Twigg, M E ^a   Edwards, A ^a   Henry, R L ^a   Holm, R H ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

GaN; Heterojunction bipolar transistor; Nanostructure; Polarization; SiC; Strain

Indexed keywords

ALUMINUM; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; PIEZOELECTRIC DEVICES; POLARIZATION; SILICON CARBIDE; STRAIN; TRANSCONDUCTANCE;

CRITICAL THICKNESS; INTERFACIAL POLARIZATION; NANO-HETEROEPITAXY THEORY; PIEZOELECTRIC POLARIZATION;

GALLIUM NITRIDE;

EID: 9644268265     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.015     Document Type: Article

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