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Volumn 84, Issue 25, 2004, Pages 5216-5218

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

(10) Bassim, N D a Twigg, M E a Eddy Jr , C R a Henry, R L a Holm, R T a Culbertson, J C a Stahlbush, R E a Neudeck, P G b Trunek, A J c Powell, J A d

a NAVAL RESEARCH LABORATORY (United States)

b NASA GLENN RESEARCH CENTER (United States)

c OHIO AEROSPACE INSTITUTE (United States)

d Sest Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM MILLING; NUCLEATION LAYERS (NL); SURFACE STEP DENSITY; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; GRAIN GROWTH; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 3142711485 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1765213 Document Type: Article

Times cited : (15)

References (9)

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