-
2
-
-
0032306273
-
-
Agarwal A.K., Chen L.S., Eldridge G.W., Siergiej R.R., Clarke R.C. 56th Annual Device Research Conference Digest, Charlottesville, VA. June 1998;94-95.
-
(1998)
56th Annual Device Research Conference Digest, Charlottesville, VA
, pp. 94-95
-
-
Agarwal, A.K.1
Chen, L.S.2
Eldridge, G.W.3
Siergiej, R.R.4
Clarke, R.C.5
-
3
-
-
0032307285
-
-
Sadler R.A., Allen S.T, Alcorn T.S., Pribbel W.L., Sumakeris J., Palmour J.W., Kehias L.T. 56th Annual Device Research Conference Digest, Charlottesville, VA. June 1998;92-93.
-
(1998)
56th Annual Device Research Conference Digest, Charlottesville, VA
, pp. 92-93
-
-
Sadler, R.A.1
Allen, S.T.2
Alcorn, T.S.3
Pribbel, W.L.4
Sumakeris, J.5
Palmour, J.W.6
Kehias, L.T.7
-
4
-
-
0032312634
-
-
Wu Y.F., Thibeault B.J., Keller B.P., Keller S., Denbaars S.P., Mishra U.K. 56th Annual Device Research Conference Digest, Charlottesville, VA. June 1998;118-119.
-
(1998)
56th Annual Device Research Conference Digest, Charlottesville, VA
, pp. 118-119
-
-
Wu, Y.F.1
Thibeault, B.J.2
Keller, B.P.3
Keller, S.4
Denbaars, S.P.5
Mishra, U.K.6
-
5
-
-
0000423699
-
-
Wang Y., Xie W., Cooper J.A. Jr, Melloch M.R., Palmour J.W. Proc 6th Intl Conf On Silicon Carbide and Related Materials,-ICSCRM-95, Kyoto, Japan. 1995;809-812.
-
(1995)
Proc 6th Intl Conf on Silicon Carbide and Related Materials,-ICSCRM-95, Kyoto, Japan
, pp. 809-812
-
-
Wang, Y.1
Xie, W.2
Cooper J.A., Jr.3
Melloch, M.R.4
Palmour, J.W.5
-
6
-
-
0342712242
-
-
Fan Ren, Abernathy C.R., Van Hove J.M., Chow P.P., Hickman R., Klaasen J.J., Kopf R.F., Hyun Cho, Jung K.B., La Roche J.R., Wilson R.G., Han J., Shul R.J., Baca A.G., Pearton S.J. MRS Internet J. Nitride Semicond. Res. 3:(Article 41):1998.
-
(1998)
MRS Internet J. Nitride Semicond. Res.
, vol.3
, Issue.ARTICLE 41
-
-
Fan, R.1
Abernathy, C.R.2
Van Hove, J.M.3
Chow, P.P.4
Hickman, R.5
Klaasen, J.J.6
Kopf, R.F.7
Hyun, C.8
Jung, K.B.9
La Roche, J.R.10
Wilson, R.G.11
Han, J.12
Shul, R.J.13
Baca, A.G.14
Pearton, S.J.15
-
7
-
-
85031585351
-
-
US patent US4985742, Issued: January 15, 1991.
-
Pankove JI. US patent US4985742, Issued: January 15, 1991.
-
-
-
Pankove, J.I.1
-
8
-
-
0028737610
-
-
Pankove J., Chang S.S., Lee H.C., Molnar R.J., Moustakas T.D., Van Zeghbroeck B. Proc. International Electron Devices Meeting, pp. -92, San Francisco, CA. December 1994;389-392.
-
(1994)
Proc. International Electron Devices Meeting, Pp. -92, San Francisco, CA
, pp. 389-392
-
-
Pankove, J.1
Chang, S.S.2
Lee, H.C.3
Molnar, R.J.4
Moustakas, T.D.5
Van Zeghbroeck, B.6
-
9
-
-
85031593722
-
-
Proc Device Research Conf, Paper IVB-5, Charlottesville, VA, June 1995. Chang SS, Pankove J, Leksono M, Van Zeghbroeck B, editors June
-
Chang SS, Pankove J, Leksono M, Van Zeghbroeck B. Proc Device Research Conf, Paper IVB-5, Charlottesville, VA, June 1995. Chang SS, Pankove J, Leksono M, Van Zeghbroeck B, editors. MRS Internet Journal, MRS Internet J Nitride Semicond Res, June 1996;1(39).
-
(1996)
MRS Internet Journal, MRS Internet J Nitride Semicond Res
, vol.1
, Issue.39
-
-
Chang, S.S.1
Pankove, J.2
Leksono, M.3
Van Zeghbroeck, B.4
-
10
-
-
0004558139
-
-
Edmond J.A., Kong H., Leonard M.T., Doverspike K., Bulman G.E., Weeks W., Irvine K.G., Dmitriev V.A. Proc SPIE Light-Emitting Diodes: Research, Manufacturing, and Applications, 3002, San Jose, CA. February 1997;2-10.
-
(1997)
Proc SPIE Light-Emitting Diodes: Research, Manufacturing, and Applications, 3002, San Jose, CA
, pp. 2-10
-
-
Edmond, J.A.1
Kong, H.2
Leonard, M.T.3
Doverspike, K.4
Bulman, G.E.5
Weeks, W.6
Irvine, K.G.7
Dmitriev, V.A.8
-
11
-
-
0000645692
-
Electrical characterization of GaN/SiC n-p heterojunction diodes
-
March
-
Torvik J.T., Leksono M., Pankove J.I., Van Zeghbroeck B., Ng H.M., Moustakas T.D. Electrical characterization of GaN/SiC n-p heterojunction diodes. Appl. Phys. Lett. 72:1998;1371-1373. March.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1371-1373
-
-
Torvik, J.T.1
Leksono, M.2
Pankove, J.I.3
Van Zeghbroeck, B.4
Ng, H.M.5
Moustakas, T.D.6
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