GaN/SiC heterojunction bipolar transistors

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 259-264

  Schaff, William J ^a   Wu, Hong ^a   Praharaj, Choudhury Jayant ^a   Murphy, Michael ^a   Eustis, Tyler ^a   Foutz, Brian ^a   Ambacher, Oliver ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; ELECTRON GAS; LEAKAGE CURRENTS; MICROWAVE AMPLIFIERS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

BASE EMITTER JUNCTION; HIGH EFFICIENCY EMITTER INJECTION; HOLE GAS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034140059     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00232-4     Document Type: Article

References (24)

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