Plasma-assisted MBE of GaN and AlGaN on 6H SiC(0001)

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 157-162

  Sinharoy, S ^a   Agarwal, A K ^a   Augustine, G ^a   Rowland, L B ^a   Messham, R L ^a   Driver, M C ^a   Hopkins, R H ^a  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; TEMPERATURE;

ACTIVATION RATE; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

FILM GROWTH;

EID: 0029763861     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)