Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 320-324

  Danielsson, E ^a   Zetterling, C M ^a   Ostling M ^a   Breitholtz, B ^a   Linthicum, K ^b   Thomson, D B ^b   Nam, O H ^b   Davis, R F ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; METALLIZING; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032642136     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00526-1     Document Type: Article

References (18)

1. Ping A.T., Chen Q., Yang J.W., Khan M.A., Adesida I. Proceedings of the IEDM, Washington DC. 1997;561-564.
2. Pankove J.I., Leksono M., Chang S.S., Walker C., Zeghbroeck B.V. MIJ-NSR, 1 http://nsr.mihj.org/1/39/complete.html (Article 39). 1996.
3. Gaska R., Yang J., Osinsky A., Khan M.A., Shur M.S. Proceedings of the IEDM, Washington DC. 1997;565-568.
4. Binari S.C., Redwing J.M., Kelner G., Kruppa W. Electron. Lett. 33:1997;242-243.
5. Strite S.C. Group III Nitrides, EMIS Data Reviews No. 11. 1994;INSPEC, London.
6. Kim W., Botchkarev A.E., Salvador A., Popovici G., Tang H., Morkoç H. J. Appl. Phys. 82:1997;219-226.
7. Seifert W., Franzheld R., Buttler E., Sobotta H., Riede V. Crystal Res. Technol. 18:1983;383.
8. Yoshida S., Misawa S., Gonda S. J. Appl. Phys. 53:1982;6844-6848.
9. Lin C.F., Chi G.C., Feng M.S., Guo J.D., Tsang J.S., Hong J.M. Appl. Phys. Lett. 68:1996;3758-3760.
10. Shan W., Fischer A.J., Song J.J., Bulman G.E., Kong H.S., Leonard M.T., Perry W.G., Bremser M.D., Davis R.F. Appl. Phys. Lett. 69:1996;740-742.
11. Strite S., Morkoç H. J. Vac. Sci. Tech. B. 10:1992;1237-1266.
12. Pearton S.J., Ren F., Zolper J.C., Shul R.J. Mat. Res. Soc. Symp. Proc. 482:1997;961-972.
13. Wu Y.-F., Jiang W.-N., Keller B.P., Keller S., Kapolnek D., Denbaars S.P., Mishra U.K., Wilson B. Solid State Electron. 41:1997;165-168.
14. Torvik J.T., Qiu C.-H., Leksono M., Pankove J.I. Appl. Phys. Lett. 72:1998;945-947.
15. Forrest S.R. Heterojunction Band Discontinuities. 1st edn:1987;Elsevier, New York.
16. Bakowski M., Gustavsson U., Lindefelt U. Phys. Stat. Sol. B. 162:1997;421-440.
17. E. Danielsson, B. Breitholtz, C.-M. Zetterling, M. Östling, Phys. Scripta (1998) in press.
18. Webster R.T., Anwar A.F.M. Mat. Res. Soc. Symp. Proc. 482:1997;929-934.