Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2372-2379

  Danielsson, E ^a   Zetterling, C M ^a   Ostling M ^a   Tsvetkov, D ^b   Dmitriev, V A ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b TDI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; HETEROJUNCTION DIODES; HOMOJUNCTION DIODES; HYDRIDE VAPOR PHASE EPITAXY; IDEALITY FACTORS; RECOMBINATION MODEL; SERIES RESISTANCES; TRANSPORT MECHANISM;

DIODES; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

ALUMINUM;

EID: 0037084237     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430892     Document Type: Article

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