Simulation of GaN/AlGaN heterojunction bipolar transistors: Part I - npn structures

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1255-1259

  Cao, X A ^a   Van Hove, J M ^b   Klaassen, J J ^b   Polley, C J ^b   Wowchak, A M ^b   Chow, P P ^b   King, D J ^b   Zhang, A P ^a   Dang, G ^a   Monier, C ^a   Pearton, S J ^a   Ren, F ^a  

^a University of Florida   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BASE GRADING; GALLIUM NITRIDE; MINORITY CARRIER LIFETIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17044447680     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00027-7     Document Type: Article

References (10)

1. See for example, the special issue of Solid-State Electronics 2000;44:1-270.
2. Mohammad S.N., Morkoc H. Prog Quant Electron. 20:1998;361.
3. Shur MS, Khan MA. In: Willander M, Hartnagel HL, editors. High Temperature Electronics, London: Chapman and Hall, 1996. p. 297-321.
4. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J Appl Phys. 86:1999;1.
5. McCarthy L., Kozodoy P., Rodwell M., DenBaars S.P., Mishra U.K. IEEE Electron Dev Lett. EDL20:1999;277.
6. Ren F., Abernathy C.R., Van Hove J.M., Chow P.P., Hickman R., Klaassen J.J., Kopf R.F., Cho H., Jung K.B., LaRoche J.R., Wilson R.G., Han J., Shul R.J., Baca A.G., Pearton S.J. MRS Internet J Nitride Semicond Res. 3:1998;41.
7. Han J., Baca A.G., Shul R.J., Willison C.G., Zhang L., Ren F., Zhang A., Dang G., Donovan S.M., Cao X.A., Cho H., Jung K.B., Abernathy C.R., Pearton S.J., Wilson R.G. Appl Phys Lett. 74:1999;2702.
8. Atlas/Blaze, Silvaco International, 1998.
9. Edgar JH, Strife S, Akasaki I, Amano H, Wetzel C, editors. Properties, processing and applications of GaN and related semiconductors. EMIS Data Review No. 23, London: IEE, 1999.
10. Yoshida S., Suzuki J. J Appl Phys. 85:1999;7932.