A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Torvik, John T ^a   Leksono, M ^a   Pankove, J I ^a   Van Zeghbroeck, B ^b  

^a Astralux Inc   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRON TUNNELING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTORESISTORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

BANDGAP; CURRENT GAIN; ELECTRON VELOCITIES; HETROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 3442902048     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000594     Document Type: Article

References (15)

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