Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 24, 2001, Pages

  Martinez F L ^a   del Prado, A ^a   Martil I ^a   Gonzalez Diaz G ^a   Bohne, W ^b   Fuhs, W ^b   Rohrich J ^b   Selle, B ^b   Sieber, I ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85038335742     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.245320     Document Type: Article

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