Defect properties of Si-, O-, N-, and H-atoms at Si - SiO2 interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2832-2839

  Lucovsky, G ^a   Jing, Z ^a   Lee, D R ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001687607     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588841     Document Type: Article

References (16)

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