Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked "N-O-N" gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2610-2621

  Niimi, H ^a   Lucovsky, G ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033259661     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591034     Document Type: Article

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