Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

EPJ Applied Physics

Volumn 33, Issue 3, 2006, Pages 205-212

  Kogelschatz, M ^a,b   Cunge, G ^b   Sadeghi, N ^a  

^a UNIV GRENOBLE ALPES   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; ETCHING; LIGHT EMISSION; PASSIVATION; SILICON; ULTRAVIOLET RADIATION;

ACTINOMETRY; BROAD BAND ABSORPTION SPECTROSCOPY; ETCHING PROFILE; SILICON GATE ETCHING;

PLASMAS;

EID: 33645981895     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2006021     Document Type: Article

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