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Self-organized anisotropic strain engineering: A new concept for quantum dot ordering
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R. Notzel, N. Sritirawisarn, E. Selguk, and S. Anantathanasarn, “Lateral ordering, position, and number control of self-organized quantum dots: The key to future functional nanophotonic devices,” IEEE J. Sel. Topics Quantum Electron., vol. 14, no. 4, pp. 1140–1149, Jul./Aug. 2008 (Invited Paper).
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Nanophotonics: Application of dressed photons to novel photonic devices and systems
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Q. Gong, R. Notzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, “Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy,” Appl. Phys. Lett., vol. 84, no. 2, pp. 275–277, Jan. 2004.
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J. Kotani, P. J. van Veldhoven, and R. Notzel, “Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy,” J. Appl. Phys., vol. 106, no. 9, pp. 093112-1–093112-5, Nov. 2009.
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S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and J. H. Wolter, “Lasing of wavelength-tunable (1.55 pm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett., vol. 89, no. 7, pp. 073115-1–073115-3, Aug. 2006.
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11
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32544445883
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Stacking and polarization control of wavelength-tunable (1.55 pm region) InAs/InGaAsP/InP (100) quantum dots
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S. Anantathanasarn, R. Notzel, P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, and J. H. Wolter, “Stacking and polarization control of wavelength-tunable (1.55 pm region) InAs/InGaAsP/InP (100) quantum dots,” Appl. Phys. Lett., vol. 88, no. 6, pp. 063105-1–063105-3, Feb. 2006.
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Polarization control of gain of stacked InAs/InP (100) quantum dots at 1.55 µm: Interplay between ground and excited state transitions
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S. Anantathanasarn, P. J. van Veldhoven, T. J. Eijkemans, T. de Vries, E. Smalbrugge, E. J. Geluk, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and R. Notzel, “Polarization control of gain of stacked InAs/InP (100) quantum dots at 1.55 µm: Interplay between ground and excited state transitions,” Appl. Phys. Lett., vol. 92, no. 12, pp. 123113-1–123113-3, Mar. 2008.
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13
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1.55-µm range InAs-InP (100) quantum-dot Fabry-Perot and ring lasers using narrow deeply etched ridge waveguides
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Y. Barbarin, S. Anantathanasarn, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and R. Notzel, “1.55-µm range InAs-InP (100) quantum-dot Fabry-Perot and ring lasers using narrow deeply etched ridge waveguides,” IEEE Photon. Technol. Lett., vol. 18, no. 24, pp. 2644–2646, Dec. 2006.
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M. T. Hill, S. Anantathanasarn, Y. Zhu, Y. S. Oei, P. J. van Veldhoven, M. K. Smit, and R. Notzel, “InAs-InP (1.55-µm region) quantum-dot microring lasers,” IEEE Photon. Technol. Lett., vol. 20, no. 6, pp. 446–448, Mar. 2008.
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Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 µm
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M. J. R. Heck, E. A. J. M. Bente, E. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Notzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 µm,” Opt. Express, vol. 15, no. 25, pp. 16 292–16 301, Dec. 2007.
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Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm
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H. Wang, J. Yuan, P. J. van Veldhoven, T. de Vries, B. Smalbrugge, E. J. Geluk, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Notzel, “Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm,” Electron. Lett., vol. 44, no. 8, pp. 522–523, Apr. 2008.
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O. Raz, J. Herrera, N. Calabretta, E. Tangdiongga, S. Anantathanasarn, R. Notzel, and H. J. S. Dorren, “Non-inverted multiple wavelength converter at 40 Gbit/s using 1550 nm quantum dot SOA,” Electron. Lett., vol. 44, no. 16, pp. 988–989, Jul. 2008.
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