Influence of an ultrathin GaAs interlayer on the structural properties of InAsInGaAsPInP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Ulloa, J M ^a   Anantathanasarn, S ^a   Van Veldhoven, P J ^a   Koenraad, P M ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; ULTRATHIN FILMS;

EXCHANGE REACTION; INTERLAYERS; QUANTUM DASHES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40049104066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2884692     Document Type: Article

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