Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Seluk E ^a   Hamhuis, G J ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

ANISOTROPIC STRAIN; QUANTUM FUNCTIONAL DEVICES; SIDEWALL ORIENTATION; STEP ENGINEERINGS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 37549012596     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801364     Document Type: Article

References (12)

1. R. Nötzel, T. Mano, Q. Gong, and J. H. Wolter, in Nanoelectronics and Nanoscale Processing, special issue of Proc. IEEE 0018-9219 91, 1898 (2003), and references therein.
2. W. Seifert, N. Carlsson, A. Petersson, L.-E. Wernersson, and L. Samuelson, Appl. Phys. Lett. 68, 1684 (1996).
3. H. Lee, J. A. Johnson, J. S. Speck, and P. M. Petroff, J. Vac. Sci. Technol. B 18, 2193 (2000).
4. Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillipp, S. Kiravittaya, C. Müller, K. Eberl, H. Gräbeldinger, and H. Schweizer, J. Cryst. Growth 242, 339 (2002).
5. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002).
6. T. v. Lippen, R. Nötzel, G. J. Hamhuis, and J. H. Wolter, Appl. Phys. Lett. 85, 118 (2004).
7. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
8. G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., Phys. Rev. Lett. 76, 952 (1996).
9. T. Mano, R. Nötzel, D. Zhou, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, J. Appl. Phys. 97, 014304 (2005).
10. E. Selcuk, T. v. Lippen, G. J. Hamhuis, and R. Nötzel, J. Cryst. Growth 301-302, 701 (2007).
11. R. Nötzel, M. Ramsteiner, J. Menniger, A. Trampert, H.-P. Schönherr, L. Däweritz, and K. H. Ploog, J. Appl. Phys. 80, 4108 (1996).
12. T. v. Lippen, R. Nötzel, G. J. Hamhuis, and J. H. Wolter, J. Appl. Phys. 97, 014304 (2005).