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Volumn 14, Issue 4, 2008, Pages 1140-1149

Lateral ordering, position, and number control of self-organized quantum dots: The key to future functional nanophotonic devices

Author keywords

Patterned substrate; Quantum dot (QD); Selective area growth; Self organization; Strain engineering

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; CHLORINE COMPOUNDS; CRYSTAL GROWTH; ELECTROMAGNETISM; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; INTEGRATED CIRCUITS; LIQUEFIED GASES; LIQUID NITROGEN; METALLORGANIC VAPOR PHASE EPITAXY; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITROGEN; NONMETALS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TECHNOLOGY; WAVEGUIDES;

EID: 48949089865     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.918251     Document Type: Article
Times cited : (7)

References (35)
  • 1
    • 3242729293 scopus 로고    scopus 로고
    • Self-organized anisotropic strain engineering: A new concept for quantum dot ordering
    • Nov
    • R. Nötzel, T. Mano, Q. Gong, and J. H. Wolter, "Self-organized anisotropic strain engineering: A new concept for quantum dot ordering," Proc. IEEE, vol. 91, no. 11, pp. 1898-1906, Nov. 2003.
    • (2003) Proc. IEEE , vol.91 , Issue.11 , pp. 1898-1906
    • Nötzel, R.1    Mano, T.2    Gong, Q.3    Wolter, J.H.4
  • 3
    • 0141749837 scopus 로고    scopus 로고
    • Quantum computation with quantum dots
    • D. Loss and D. P. DiVincenzo, "Quantum computation with quantum dots," Phys. Rev. A, vol. 57, pp. 120-126, 1998.
    • (1998) Phys. Rev. A , vol.57 , pp. 120-126
    • Loss, D.1    DiVincenzo, D.P.2
  • 4
    • 34548637734 scopus 로고    scopus 로고
    • Formation of linear InAs quantum dot arrays on InGaAsP/InP (1 0 0) by self-organized anisotropic strain engineering and their optical properties
    • N. Sritirawisarn, F. W. M. van Otten, T. J. Eijkemans, and R. Nötzel, "Formation of linear InAs quantum dot arrays on InGaAsP/InP (1 0 0) by self-organized anisotropic strain engineering and their optical properties," J. Appl. Phys., vol. 102, pp. 053514-1-053514-7, 2007.
    • (2007) J. Appl. Phys , vol.102
    • Sritirawisarn, N.1    van Otten, F.W.M.2    Eijkemans, T.J.3    Nötzel, R.4
  • 5
    • 37549012596 scopus 로고    scopus 로고
    • Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (3 1 1)B substrates
    • E. Selcuk, G. J. Hamhuis, and R. Nötzel, "Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (3 1 1)B substrates," J. Appl. Phys., vol. 102, pp. 094301-1-094301-5, 2007.
    • (2007) J. Appl. Phys , vol.102
    • Selcuk, E.1    Hamhuis, G.J.2    Nötzel, R.3
  • 6
    • 34848913715 scopus 로고    scopus 로고
    • Submicron active-passive integration with position and number controlled InAs/InP (1 0 0) quantum dots (1.55 μm wavelength region) by selective-area growth
    • D. Zhou, S. Anantathanasarn, P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, T. de Vries, E. Smalbrugge, and R. Nötzel, "Submicron active-passive integration with position and number controlled InAs/InP (1 0 0) quantum dots (1.55 μm wavelength region) by selective-area growth," Appl. Phys. Lett., vol. 91, pp. 131102-1-131102-3, 2007.
    • (2007) Appl. Phys. Lett , vol.91
    • Zhou, D.1    Anantathanasarn, S.2    van Veldhoven, P.J.3    van Otten, F.W.M.4    Eijkemans, T.J.5    de Vries, T.6    Smalbrugge, E.7    Nötzel, R.8
  • 7
    • 79955993622 scopus 로고    scopus 로고
    • T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Formation of InAs quantum dot arrays on GaAs (1 0 0) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template, Appl. Phys. Lett., 81, pp. 1705-1707, 2002.
    • T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, "Formation of InAs quantum dot arrays on GaAs (1 0 0) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template," Appl. Phys. Lett., vol. 81, pp. 1705-1707, 2002.
  • 8
    • 0942300863 scopus 로고    scopus 로고
    • Direct imaging of self-organized anisotropic strain engineering: Improving the long- range order of one-dimensional (In,Ga)As quantum dot arrays
    • T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, "Direct imaging of self-organized anisotropic strain engineering: Improving the long- range order of one-dimensional (In,Ga)As quantum dot arrays," J. Appl. Phys., vol. 95, pp. 109-114, 2004.
    • (2004) J. Appl. Phys , vol.95 , pp. 109-114
    • Mano, T.1    Nötzel, R.2    Hamhuis, G.J.3    Eijkemans, T.J.4    Wolter, J.H.5
  • 9
    • 3242694425 scopus 로고    scopus 로고
    • Self-organized lattice of ordered quantum dot molecules
    • T. V. Lippen, R. Nötzel, G. J. Hamhuis, and J. H. Wolter, "Self-organized lattice of ordered quantum dot molecules," Appl. Phys. Lett., vol. 85, pp. 118-120, 2004.
    • (2004) Appl. Phys. Lett , vol.85 , pp. 118-120
    • Lippen, T.V.1    Nötzel, R.2    Hamhuis, G.J.3    Wolter, J.H.4
  • 10
    • 13744258233 scopus 로고    scopus 로고
    • Ordered quantum dot molecules and single quantum dots by self-organized anisotropic strain engineering
    • T. V. Lippen, R. Nötzel, G. J. Hamhuis, and J. H. Wolter, "Ordered quantum dot molecules and single quantum dots by self-organized anisotropic strain engineering," J. Appl. Phys., vol. 97, pp. 044301-1-044301-6, 2005.
    • (2005) J. Appl. Phys , vol.97
    • Lippen, T.V.1    Nötzel, R.2    Hamhuis, G.J.3    Wolter, J.H.4
  • 11
    • 5444230424 scopus 로고
    • Spontaneous Ordering of Arrays of Coherent Strained Islands
    • V. A. Shchukin, N. N. Ledentsov, P. S. Kop'ev, and D. Bimberg, "Spontaneous Ordering of Arrays of Coherent Strained Islands," Phys. Rev. Lett., vol. 75, pp. 2968-2971, 1995.
    • (1995) Phys. Rev. Lett , vol.75 , pp. 2968-2971
    • Shchukin, V.A.1    Ledentsov, N.N.2    Kop'ev, P.S.3    Bimberg, D.4
  • 12
    • 0033246392 scopus 로고    scopus 로고
    • Spontaneous ordering of nanostructures on crystal surfaces
    • V. A. Shchukin and D. Bimberg, "Spontaneous ordering of nanostructures on crystal surfaces," Rev. Mod. Phys., vol. 71, pp. 1125-1171, 1999.
    • (1999) Rev. Mod. Phys , vol.71 , pp. 1125-1171
    • Shchukin, V.A.1    Bimberg, D.2
  • 13
    • 19944432394 scopus 로고    scopus 로고
    • Complex quantum dot array formation by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates
    • T. Mano, R. Nötzel, D. Zhou, G. J. Hamhuis, T. J Eijkemans, and J. H. Wolter, "Complex quantum dot array formation by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates," J. Appl. Phys., vol. 97, pp. 014304-1-014304-8, 2005.
    • (2005) J. Appl. Phys , vol.97
    • Mano, T.1    Nötzel, R.2    Zhou, D.3    Hamhuis, G.J.4    Eijkemans, T.J.5    Wolter, J.H.6
  • 14
    • 7244257542 scopus 로고    scopus 로고
    • Self-organization in growth of quantum dot superlattices
    • J. Tersoff, C. Teichert, and M. Lagally, "Self-organization in growth of quantum dot superlattices," Phys. Rev. Lett., vol. 76, pp. 1675-1678, 1996.
    • (1996) Phys. Rev. Lett , vol.76 , pp. 1675-1678
    • Tersoff, J.1    Teichert, C.2    Lagally, M.3
  • 15
    • 36449006681 scopus 로고
    • In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metal-organic chemical vapor deposition
    • M. N. Kitamura, J. Oshinowo, and Y. Arakawa, "In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 66, pp. 3663-3665, 1995.
    • (1995) Appl. Phys. Lett , vol.66 , pp. 3663-3665
    • Kitamura, M.N.1    Oshinowo, J.2    Arakawa, Y.3
  • 16
    • 0842290100 scopus 로고    scopus 로고
    • Q. Gong, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, Wavelength tuning of InAs quantum dots grown on InP (1 0 0) by chemical-beam epitaxy, Appl. Phys. Lett., 84, pp. 275-277, 2004.
    • Q. Gong, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, "Wavelength tuning of InAs quantum dots grown on InP (1 0 0) by chemical-beam epitaxy," Appl. Phys. Lett., vol. 84, pp. 275-277, 2004.
  • 17
    • 22944489896 scopus 로고    scopus 로고
    • Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP/InP (1 0 0) grown by metal-organic vapor phase epitaxy
    • S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, "Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP/InP (1 0 0) grown by metal-organic vapor phase epitaxy," J. Appl. Phys., vol. 98, pp. 013503-1-013503-7, 2005.
    • (2005) J. Appl. Phys , vol.98
    • Anantathanasarn, S.1    Nötzel, R.2    van Veldhoven, P.J.3    Eijkemans, T.J.4    Wolter, J.H.5
  • 20
    • 33845744446 scopus 로고    scopus 로고
    • Y. Barbarin, S. Anantathanasarn, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and R. Nötzel, 1.55-μm range InAs-InP (1 0 0) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides, IEEE Photon. Technol. Lett., 18, no. 24, pp. 2644-2646, Dec. 2006.
    • Y. Barbarin, S. Anantathanasarn, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and R. Nötzel, "1.55-μm range InAs-InP (1 0 0) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides," IEEE Photon. Technol. Lett., vol. 18, no. 24, pp. 2644-2646, Dec. 2006.
  • 22
    • 37149025933 scopus 로고    scopus 로고
    • M. J. R. Heck, E. A. J. M. Bente, E. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Nötzel, Observation of Q-switching and mode-locking in two-section InAs/InP (1 0 0) quantum dot lasers around 1.55 μm, Opt. Exp., 15, no. 25, pp. 16292-16301, 2007.
    • M. J. R. Heck, E. A. J. M. Bente, E. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Nötzel, "Observation of Q-switching and mode-locking in two-section InAs/InP (1 0 0) quantum dot lasers around 1.55 μm," Opt. Exp., vol. 15, no. 25, pp. 16292-16301, 2007.
  • 23
    • 42149154492 scopus 로고    scopus 로고
    • H. Wang, J. Yuan, P. J. van Veldhoven, T. de Vries, B. Smalbrugge, E. J. Geluk, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Nötzel, Butt joint integrated extended cavity InAs/InP (1 0 0) quantum dot laser emitting around 1.55 μm, Electron. Lett., 44, no. 8, pp. 522-523, 2008.
    • H. Wang, J. Yuan, P. J. van Veldhoven, T. de Vries, B. Smalbrugge, E. J. Geluk, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Nötzel, "Butt joint integrated extended cavity InAs/InP (1 0 0) quantum dot laser emitting around 1.55 μm," Electron. Lett., vol. 44, no. 8, pp. 522-523, 2008.
  • 25
    • 36449009531 scopus 로고    scopus 로고
    • Alignment of InP Stranski-Krastanow dots by growth on patterned GaAs/GaInP surfaces
    • W. Seifert, N. Carlsson, A. Petersson, L.-E. Wernersson, and L. Samuelson, "Alignment of InP Stranski-Krastanow dots by growth on patterned GaAs/GaInP surfaces," Appl. Phys. Lett., vol. 68, pp. 1684-1686, 1996.
    • (1996) Appl. Phys. Lett , vol.68 , pp. 1684-1686
    • Seifert, W.1    Carlsson, N.2    Petersson, A.3    Wernersson, L.-E.4    Samuelson, L.5
  • 26
    • 0032614676 scopus 로고    scopus 로고
    • R. Zhang, R. Tsui, K. Shiralagi, and H. Goronkin, Spatially selective formation of InAs self-organized quantum dots on patterned GaAs (1 0 0) substrates, Jpn. J. Appl. Phys. part 1, 38, pp. 455-458, 1999.
    • R. Zhang, R. Tsui, K. Shiralagi, and H. Goronkin, "Spatially selective formation of InAs self-organized quantum dots on patterned GaAs (1 0 0) substrates," Jpn. J. Appl. Phys. part 1, vol. 38, pp. 455-458, 1999.
  • 27
    • 0000658134 scopus 로고    scopus 로고
    • Strain-engineered self-assembled semiconductor quantum dot lattices
    • H. Lee, J. A. Johnson, M. Y. He, J. S. Speck, and P. M. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices," Appl. Phys. Lett., vol. 78, pp. 105-107, 2001.
    • (2001) Appl. Phys. Lett , vol.78 , pp. 105-107
    • Lee, H.1    Johnson, J.A.2    He, M.Y.3    Speck, J.S.4    Petroff, P.M.5
  • 28
    • 0000217357 scopus 로고    scopus 로고
    • Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy
    • C.-K. Hahn, J. Motohisa, and T. Fukui, "Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy," Appl. Phys. Lett., vol. 76, pp. 3947-3949, 2000.
    • (2000) Appl. Phys. Lett , vol.76 , pp. 3947-3949
    • Hahn, C.-K.1    Motohisa, J.2    Fukui, T.3
  • 29
    • 0347607088 scopus 로고    scopus 로고
    • Area-controlled growth of InAs quantum dots and improvement of density and size distribution
    • J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa, "Area-controlled growth of InAs quantum dots and improvement of density and size distribution," Appl. Phys. Lett., vol. 77, pp. 3382-3384, 2000.
    • (2000) Appl. Phys. Lett , vol.77 , pp. 3382-3384
    • Tatebayashi, J.1    Nishioka, M.2    Someya, T.3    Arakawa, Y.4
  • 31
    • 1542337017 scopus 로고    scopus 로고
    • Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots
    • D. Chithrani, R. L. Williams, J. Lefebvre, P. J. Poole, and G. C. Aers, "Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots," Appl. Phys. Lett., vol. 84, pp. 978-980, 2004.
    • (2004) Appl. Phys. Lett , vol.84 , pp. 978-980
    • Chithrani, D.1    Williams, R.L.2    Lefebvre, J.3    Poole, P.J.4    Aers, G.C.5
  • 32
    • 33847108932 scopus 로고    scopus 로고
    • Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane
    • T.-P. Hsieh, J.-I. Chyi, H.-S. Chang, W.-Y. Chen, T. M. Hsu, and W.-H. Chang, "Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane," Appl. Phys. Lett., vol. 90, pp. 073105-1-073105-3, 2007.
    • (2007) Appl. Phys. Lett , vol.90
    • Hsieh, T.-P.1    Chyi, J.-I.2    Chang, H.-S.3    Chen, W.-Y.4    Hsu, T.M.5    Chang, W.-H.6
  • 34
    • 33845807468 scopus 로고    scopus 로고
    • Lateral wavelength control of InAs/InGaAsP/InP (1 0 0) quantum dots in the 1.55 μm region by selective-area metal-organic vapor phase epitaxy
    • D. Zhou, S. Anantathanasarn, P. J. Van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, T. de Vries, E. Smalbrugge, and R. Nötzel, "Lateral wavelength control of InAs/InGaAsP/InP (1 0 0) quantum dots in the 1.55 μm region by selective-area metal-organic vapor phase epitaxy," J. Appl. Phys., vol. 100, pp. 113512-1-113512-4, 2006.
    • (2006) J. Appl. Phys , vol.100
    • Zhou, D.1    Anantathanasarn, S.2    Van Veldhoven, P.J.3    van Otten, F.W.M.4    Eijkemans, T.J.5    de Vries, T.6    Smalbrugge, E.7    Nötzel, R.8
  • 35
    • 33750692014 scopus 로고    scopus 로고
    • Optical characteristics of single InAs/InGaAsP/InP (1 0 0) quantum dots emitting at 1.55 μm
    • N. I. Cade, H. Gotoh, H. Kamada, H. Nakano, S. Anantathanasarn, and R. Nötzel, "Optical characteristics of single InAs/InGaAsP/InP (1 0 0) quantum dots emitting at 1.55 μm," Appl. Phys. Lett., vol. 89, pp. 181113-1-181113-3, 2006.
    • (2006) Appl. Phys. Lett , vol.89
    • Cade, N.I.1    Gotoh, H.2    Kamada, H.3    Nakano, H.4    Anantathanasarn, S.5    Nötzel, R.6


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