Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP/InP (100) grown by metal-organic vapor-phase epitaxy

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Anantathanasarn, S ^a   Notzel R ^a   Van Veldhoven, P J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION WAVELENGTH; GROWTH TEMPERATURE; INTERLAYERS; SUBMONOLAYERS;

GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 22944489896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1938271     Document Type: Article

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