Size evolution of site-controlled InAs quantum dots grown by molecular beam epitaxy on prepatterned GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1523-1526

  Atkinson, P ^a   Bremner, S P ^a   Anderson, D ^a   Jones, G A C ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR DEPOSITION;

INAS DOT GROWTH; PREFERENTIAL NUCLEATION SITES; SITE CONTROLLED DOTS; WET ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744819178     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2190674     Document Type: Article

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