Surface morphology control of InAs nanostructures grown on InGaAs/InP

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4555-4557

  Zhang, Z H ^a   Pickrell, G W ^a,b   Chang, K L ^a   Lin, H C ^a   Hsieh, K C ^a   Cheng, K Y ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b OptiComp Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN;

SURFACE DIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038721303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1584523     Document Type: Article

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