Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1705-1707

  Mano, T ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; GAAS; GAAS(1 0 0); INAS; INAS QUANTUM DOTS; LOW GROWTH RATE; PHOTOLUMINESCENCE EFFICIENCY; QD ARRAYS; SELF-ORGANIZED ANISOTROPIC STRAIN ENGINEERING; STRUCTURAL QUALITIES; SURFACE MIGRATION;

ANISOTROPY; GALLIUM ARSENIDE; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUPERLATTICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955993622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503872     Document Type: Article

References (15)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). apl APPLAB 0003-6951
2. H. Sakaki, Jpn. J. Appl. Phys., Part 1 19, 735 (1980). jja JJAPA5 0021-4922
3. N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth 101, 688 (1991). jcr JCRGAE 0022-0248
4. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993). apl APPLAB 0003-6951
5. R. Nötzel, J. Temmyo, and T. Tamamura, Nature (London) 369, 131 (1994). nat NATUAS 0028-0836
6. M. Kitamura, M. Nishioka, J. Oshinowo, and Y. Arakawa, Appl. Phys. Lett. 66, 3663 (1995). apl APPLAB 0003-6951
7. D. S. L. Mui, D. Leonard, L. A. Coldren, and P. M. Petroff, Appl. Phys. Lett. 66, 1620 (1995). apl APPLAB 0003-6951
8. A. Konkar, A. Madhukar, and P. Chen, Appl. Phys. Lett. 72, 220 (1998). apl APPLAB 0003-6951
9. W. Seifert, N. Carlsson, A. Petersson, L.-E. Wernersson, and L. Samuelson, Appl. Phys. Lett. 68, 1684 (1996). apl APPLAB 0003-6951
10. H. Lee, J. A. Johnson, J. S. Speck, and P. M. Petroff, J. Vac. Sci. Technol. B 18, 2193 (2000). jvb JVTBD9 0734-211X
11. W. Ma, R. Nötzel, A. Trampert, M. Ramsteiner, H. Zhu, H.-P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 78, 1297 (2001). apl APPLAB 0003-6951
12. W. Ma, R. Nötzel, H.-P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 79, 4219 (2001). apl APPLAB 0003-6951
13. From XRD recorded in the vicinity of the glancing exit (311) reflection, the wire periodicity along [011] is 160 nm.
14. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995). prl PRLTAO 0031-9007
15. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, S. Malik, D. Childs, and R. Murray, J. Cryst. Growth 227, 1000 (2001). jcr JCRGAE 0022-0248