Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Sritirawisarn, N ^a   Van Otten, F W M ^a   Eijkemans, T J ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN MEASUREMENT;

ANISOTROPIC SURFACE MIGRATION; STRAIN FIELD MODULATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548637734     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2777198     Document Type: Article

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