Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

Applied Physics Letters

Volumn 84, Issue 2, 2004, Pages 275-277

  Gong, Q ^a   Notzel R ^a   Van Veldhoven, P J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; CRYSTAL LATTICES; DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SOLID STATE LASERS; SURFACE STRUCTURE;

GALLIUM INDIUM ARSENIUM PHOSPHIDE; INDIUM ARSENIDE; NONRADIATIVE RECOMBINATION; WAVELENGTH TUNING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0842290100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1640474     Document Type: Article

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