First demonstration of single-layer InAs/InP (100) quantum-dot laser: Continuous wave, room temperature, ground state

Electronics Letters

Volumn 45, Issue 25, 2009, Pages 1317-1318

  Kotani, J ^a   Van Veldhoven, P J ^a   De Vries, T ^a   Smalbrugge, B ^a   Bente, E A J M ^a   Smit, M K ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIOMEDICAL APPLICATIONS; CONTINUOUS WAVE; CONTINUOUS WAVE MODES; GROUND STATE TRANSITION; HIGH SLOPE EFFICIENCY; INAS QUANTUM WELL; INAS/INP; LASING WAVELENGTH; METAL-ORGANIC VAPOUR PHASE EPITAXY; QUANTUM-DOT LASERS; ROOM TEMPERATURE; SINGLE LAYER;

CRYSTAL GROWTH; GROUND STATE; INDIUM ARSENIDE; LASERS; ORGANOMETALLICS; QUANTUM THEORY; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 72249099337     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2558     Document Type: Article

References (6)

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