Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 164-168

  Sritirawisarn, N ^a   van Otten, F W M ^a   Soto Rodriguez, P E D ^a   Wera, J L E ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A1. Low dimensional structures; A3. Chemical beam epitaxy; B1. Nanomaterials

Indexed keywords

A1. LOW-DIMENSIONAL STRUCTURES; EMISSION WAVELENGTH; GAAS; GROWTH CONDITIONS; INAS; INAS QUANTUM DOTS; INP; LOW-DIMENSIONAL STRUCTURES; NANO-MATERIALS; PHOTOLUMINESCENCE EMISSION; QD ARRAYS; ROOM TEMPERATURE; SELF-ORGANIZED ANISOTROPIC STRAIN ENGINEERING; TELECOM WAVELENGTHS; ULTRA-THIN;

ANISOTROPY; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; INDIUM ARSENIDE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 71649111918     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.017     Document Type: Article

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