Polarization control of gain of stacked InAs/InP (100) quantum dots at 1.55 μm: Interplay between ground and excited state transitions

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Anantathanasarn, S ^a   Van Veldhoven, P J ^a   Eijkemans, T J ^a   De Vries, T ^a   Smalbrugge, E ^a   Geluk, E J ^a   Bente, E A J M ^a   Oei, Y S ^a   Smit, M K ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; GAIN CONTROL; GROUND STATE; INDIUM ARSENIDE; PHOTOLUMINESCENCE; POLARIZATION;

INJECTION CURRENT; TRANSVERSE ELECTRIC (TE);

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349121792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2904703     Document Type: Article

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