Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 μm

Electronics Letters

Volumn 44, Issue 8, 2008, Pages 522-524

  Wang, H ^a   Yuan, J ^a   Van Veldhoven, P J ^a   De Vries, T ^a   Smalbrugge, B ^a   Geluk, E J ^a   Bente, E A J M ^a   Oei, Y S ^a   Smit, M K ^a   Anantathanasarn, S ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; INDIUM ARSENIDE; INDIUM PHOSPHIDE; LIGHT EMISSION; OPTICAL WAVEGUIDES;

BUTT JOINT; CONTINUOUS WAVE LASING; GROUND STATE TRANSITION;

QUANTUM WELL LASERS;

EID: 42149154492     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083666     Document Type: Article

References (6)

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2. Yang, J., Bhattacharya, P., and Wu, Z.: ' Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon ', IEEE Photonics Technol. Lett., 2007, 19, p. 747-749 1041-1135
3. Anantathanasarn, S., Nötzel, R., van Veldhoven, P.J., van Otten, F.W.M., Barbarin, Y., Servanton, G., de Vries, T., Smalbrugge, E., Geluk, E.J., Eijkemans, T.J., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., and Wolter, J.H.: ' Lasing of wavelength-tunable (1.55m region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy ', Appl. Phys. Lett., 2006, 89, p. 073115 10.1063/1.2336077 0003-6951
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