Alignment of InP Stranski-Krastanow dots by growth on patterned GaAs/GaInP surfaces

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1684-1686

  Seifert, W ^a   Carlsson, N ^a   Petersson, A ^a   Wernersson, L E ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000494852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115905     Document Type: Article

References (13)

1. I. N. Stranski and L. Krastanow, Sitzungsber. der Akad. der Wiss. Wien, Mathem.-naturwiss. Klasse IIb 146, 797 (1938).
2. J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
3. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
4. N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert, and R. Wallenberg, J. Cryst. Growth 156, 23 (1995).
5. S. Ruvimov, P. Werner, K. Scheerschmidt, U. Gösele, J. Heydenreich, U. Richter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, P. S. Kop'ev, and Zh. I. Alferov, Phys. Rev. B 51, 14766 (1995).
6. M. Kitamura, M. Nishioka, J. Oshinowo, and Y. Arakawa, Appl. Phys. Lett. 66, 3663 (1995).
7. A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, and D. H. Rich, J. Cryst. Growth 150, 311 (1995).
8. D. S. L. Mui, D. Leonard, L. A. Coldren, and P. M. Petroff, Appl. Phys. Lett. 66, 1620 (1995).
9. S. Jeppesen, M. Miller, D. Hessman, B. Kowalski, I. Maximov, and L. Samuelson, Appl. Phys. Lett. (to be published).
10. L. E. Wernersson, K. Georgsson, A. Litwin, L. Samuelson, and W. Seifert, J. Appl. Phys. 79, 500 (1996).
11. N. Buchan, A. Jacubowicz, R. F. Broom, W. Heuberger, and P. Roentgen, Appl. Phys. Lett. 61, 2996 (1992).
12. K. Georgsson, N. Carlsson, L. Samuelson, W. Seifert, and R. Wallenberg, Appl. Phys. Lett. 67, 2981 (1995).
13. This effect has also been studied in numerous publication for growth of GaInAs on patterned structures, see: M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchard, N. Collis, and A. Chew, Semicond. Sci. Technol. 8, 998 (1993); B. P. Keller, S. Keller, H. Herrnberger, J. Lenzner, S. Nilsson, and W. Seifert, J. Cryst. Growth 140, 33 (1994).